型号/品牌/封装
品类/描述
库存
价格(含税)
资料
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品类: 晶体管描述: Trans JFET N-CH Si 3Pin953620-49￥0.000050-99￥0.0000100-299￥0.0000300-499￥0.0000500-999￥0.00001000-4999￥0.00005000-9999￥0.0000≥10000￥0.0000 -
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品类: 晶体管描述: MMBD7000 系列 100 V 200 mA 表面贴装 硅 开关二极管 - SOT-23-3490120-49￥0.472550-99￥0.4375100-299￥0.4200300-499￥0.4060500-999￥0.39551000-4999￥0.38855000-9999￥0.3815≥10000￥0.3745 -
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品类: 晶体管描述: MMBD914 系列 100 V 250 mA 表面贴装 硅 开关二极管 - SOT-23-3136020-49￥0.324050-99￥0.3000100-299￥0.2880300-499￥0.2784500-999￥0.27121000-4999￥0.26645000-9999￥0.2616≥10000￥0.2568 -
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品类: 晶体管描述:612120-49￥0.000050-99￥0.0000100-299￥0.0000300-499￥0.0000500-999￥0.00001000-4999￥0.00005000-9999￥0.0000≥10000￥0.0000 -
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品类: 晶体管描述: MMBT3906LT1 PNP三极管 -40V -200mA/-0.2A 250MHz 100~300 -400mV/-0.4V SOT-23/SC-59 marking/标记 2A 高直流电流增益974520-49￥0.202550-99￥0.1875100-299￥0.1800300-499￥0.1740500-999￥0.16951000-4999￥0.16655000-9999￥0.1635≥10000￥0.1605 -
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品类: 晶体管描述: SOIC PNP 40V 0.2A48505-24￥2.578525-49￥2.387550-99￥2.2538100-499￥2.1965500-2499￥2.15832500-4999￥2.11065000-9999￥2.0915≥10000￥2.0628 -
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品类: 晶体管描述: RF Power Transistor,1.8 to 2000MHz, 100W, Typ Gain in dB is 27.2 @ 512MHz, 50V, LDMOS, SOT182698361-9￥736.588210-49￥710.743050-99￥707.5124100-149￥704.2817150-249￥699.1127250-499￥694.5898500-999￥690.0668≥1000￥684.8978 -
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品类: 晶体管描述: RF Power Transistor,1.8 to 600MHz, 300W, Typ Gain in dB is 25 @ 230MHz, 50V, LDMOS, SOT173614021-9￥664.357810-49￥641.047050-99￥638.1332100-149￥635.2193150-249￥630.5571250-499￥626.4778500-999￥622.3984≥1000￥617.7362 -
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品类: 晶体管描述: RF Power Transistor,1.8 to 2000MHz, 25W, Typ Gain in dB is 25.9 @ 512MHz, 50V, LDMOS, SOT179156001-9￥543.248510-49￥529.076850-99￥518.2118100-199￥514.4327200-499￥511.5984500-999￥507.81931000-1999￥505.4573≥2000￥503.0954 -
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品类: 晶体管描述: RF Power Transistor,1.8 to 600MHz, 300W, Typ Gain in dB is 25 @ 130MHz, 50V, LDMOS, SOT182678401-9￥792.585010-49￥764.775050-99￥761.2988100-149￥757.8225150-249￥752.2605250-499￥747.3938500-999￥742.5270≥1000￥736.9650 -
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品类: 晶体管描述: RF Power Transistor,1.8 to 600MHz, 150W, Typ Gain in dB is 26.3 @ 230MHz, 50V, LDMOS, SOT173651531-9￥399.199510-49￥388.785650-99￥380.8016100-199￥378.0246200-499￥375.9418500-999￥373.16481000-1999￥371.4291≥2000￥369.6935 -
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品类: 晶体管描述: RF Power Transistor,1 to 2700MHz, 125W, Typ Gain in dB is 16 @ 2500MHz, 50V, GaN, SOT179127021-9￥3918.057010-24￥3882.438325-49￥3864.629050-99￥3846.8196100-149￥3829.0103150-249￥3811.2009250-499￥3793.3916≥500￥3775.5822 -
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品类: 晶体管描述: 双极晶体管 - 双极结型晶体管(BJT) 500mA 75V NPN867820-49￥0.000050-99￥0.0000100-299￥0.0000300-499￥0.0000500-999￥0.00001000-4999￥0.00005000-9999￥0.0000≥10000￥0.0000 -
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品类: 晶体管描述: RF Power Transistor,1200 to 1400MHz, 330W, Typ Gain in dB is 18 @ 1400MHz, 50V, LDMOS, SOT179344001-9￥8060.668010-24￥7987.389225-49￥7950.749850-99￥7914.1104100-149￥7877.4710150-249￥7840.8316250-499￥7804.1922≥500￥7767.5528 -
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品类: 晶体管描述: 2GHz, 30W, 26V Lateral N-Channel RF Power MOSFET506220-49￥0.000050-99￥0.0000100-299￥0.0000300-499￥0.0000500-999￥0.00001000-4999￥0.00005000-9999￥0.0000≥10000￥0.0000 -
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品类: 晶体管描述: 射频金属氧化物半导体场效应(RF MOSFET)晶体管 60W GSM 1.8GHZ688820-49￥0.000050-99￥0.0000100-299￥0.0000300-499￥0.0000500-999￥0.00001000-4999￥0.00005000-9999￥0.0000≥10000￥0.0000 -
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品类: 晶体管描述: 2170MHz, 45W, 28V Lateral N-Channel RF Power MOSFET789020-49￥0.000050-99￥0.0000100-299￥0.0000300-499￥0.0000500-999￥0.00001000-4999￥0.00005000-9999￥0.0000≥10000￥0.0000 -
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品类: 晶体管描述: 2000MHz, 10W, 26V Lateral N-Channel Broadband RF Power MOSFET696820-49￥0.000050-99￥0.0000100-299￥0.0000300-499￥0.0000500-999￥0.00001000-4999￥0.00005000-9999￥0.0000≥10000￥0.0000 -
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品类: 晶体管描述: MOSFET RF N-CHAN 28V 33W NI-880S896020-49￥0.000050-99￥0.0000100-299￥0.0000300-499￥0.0000500-999￥0.00001000-4999￥0.00005000-9999￥0.0000≥10000￥0.0000 -
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品类: 晶体管描述: MOSFET RF N-CH 26V 100W TO272422531-9￥366.091010-49￥356.540850-99￥349.2190100-199￥346.6723200-499￥344.7622500-999￥342.21551000-1999￥340.6238≥2000￥339.0321 -
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品类: 晶体管描述: RF MOSFET Transistors HV7 1.9GHz 28V274320-49￥0.000050-99￥0.0000100-299￥0.0000300-499￥0.0000500-999￥0.00001000-4999￥0.00005000-9999￥0.0000≥10000￥0.0000
