简介：GSI Technology是低有功功率，全功能，高性能SRAM和电信集成电路供应商。采用先进的CMOS技术和创新的建筑设计技术，为通信，网络和电信市场。 GSI技术提供了异步，同步，DSP专用的SRAM和逻辑的电信产品集中在边缘接入市场。产品具有低工作电流，灵活的输出驱动器，工业温度和高性能。
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描述:
SRAM Chip Sync Quad 3.3V 72M-Bit 2M x 36 6.5ns 100Pin TQFP Tray
5588
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描述:
SRAM Chip Async Single 3.3V 1M-Bit 64K x 16 7ns 48Pin FBGA Tray
9757
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描述:
静态随机存取存储器 1.8 or 1.5V 1M x 18 18M
8964
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描述:
SRAM Chip Sync Dual 1.8V 36M-Bit 1M x 36 0.5ns 165Pin FBGA Tray
4118
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描述:
36Mb Pipelined and Flow Through Synchronous NBT SRAM
1742
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描述:
QDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 13 X 15MM, 1MM PITCH, FPBGA-165
9376
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描述:
8ns 128K x 16 2Mb asynchronous SRAM
5291
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描述:
SRAM Chip Async Single 3.3V 1M-Bit 128K x 8 10ns 32Pin TSOP-II
1918
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描述:
静态随机存取存储器 3.3V 128K x 24 3M C Temp
5358
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描述:
10ns 128K x 16 2Mb asynchronous SRAM
5822
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描述:
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
7453
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描述:
BGA 165/SYNCHRONOUS SRAM"s 2M x 18 (36 Meg) NBT
4621
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描述:
36Mb Pipelined and Flow Through Synchronous NBT SRAMs
2523
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描述:
36Mb Pipelined and Flow Through Synchronous NBT SRAM
5383
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描述:
SRAM Chip Sync Octal 1.8V/2.5V 36M-Bit 512K x 72Bit 8.5ns/4ns 209Pin FBGA Tray
7770
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描述:
SRAM Chip Sync Quad 2.5V/3.3V 36M-Bit 1M x 36 6.5ns/2.5ns 100Pin TQFP Tray
9955
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描述:
12ns 128K x 8 1Mb asynchronous SRAM
7169
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描述:
SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 8ns 44Pin TSOP-II Tray
5835
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描述:
SRAM Chip Async Single 3.3V 2M-Bit 256K x 8 10ns 44Pin TSOP-II Tray
2043
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描述:
SRAM Chip Sync Single 1.8V 72M-Bit 2M x 36 0.45ns 165Pin FBGA Tray
1882
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描述:
72Mb SigmaCIO DDR-II Burst of 4 SRAM
3031
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描述:
72Mb SigmaQuad-II Burst of 2 SRAM
4593
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描述:
72Mb SigmaCIO DDR-II Burst of 2 SRAM
2569
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描述:
SRAM Chip Sync Dual 2.5V/3.3V 36M-Bit 2M x 18 7.5ns/3.8ns 100Pin TQFP
6806
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描述:
256K x 16 4Mb Asynchronous SRAM
6502
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描述:
SRAM Chip Sync Dual 1.8V 72M-Bit 4M x 18 0.45ns 165Pin FBGA
3977
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描述:
静态随机存取存储器 1.8 or 1.5V 4M x 18 72M
7211
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描述:
SRAM Chip Async Single 3.3V 8M-Bit 512K x 16 10ns 119Pin F-BGA Tray
6316
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描述:
SRAM Chip Sync Dual 2.5V/3.3V 36M-Bit 2M x 18 7.5ns/3.8ns 165Pin FBGA
8738
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描述:
SRAM Chip Sync Single 1.8V 72M-Bit 4M x 18 0.45ns 165Pin FBGA
3233
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